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Part 1: Document Description
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Citation |
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Title: |
Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit |
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Identification Number: |
doi:10.60933/PRDR/A458PH |
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Distributor: |
PolyU Research Data Repository |
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Date of Distribution: |
2026-06-30 |
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Version: |
1 |
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Bibliographic Citation: |
WU, Zehan, 2026, "Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit", https://doi.org/10.60933/PRDR/A458PH, PolyU Research Data Repository, V1, UNF:6:kxYAjtvMFdIa4Px90rdrLQ== [fileUNF] |
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Citation |
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Title: |
Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit |
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Identification Number: |
doi:10.60933/PRDR/A458PH |
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Authoring Entity: |
WU, Zehan |
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Distributor: |
PolyU Research Data Repository |
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Access Authority: |
WU, Zehan |
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Depositor: |
WU, Zehan |
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Date of Deposit: |
2026-06-30 |
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Holdings Information: |
https://doi.org/10.60933/PRDR/A458PH |
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Study Scope |
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Keywords: |
Physics |
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Abstract: |
Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit |
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Methodology and Processing |
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Sources Statement |
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Data Access |
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Other Study Description Materials |
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File Description--f858 |
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File: 2nd Data Collection.tab |
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Notes: |
UNF:6:kxYAjtvMFdIa4Px90rdrLQ== |
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List of Variables: | |
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Variables |
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f858 Location: |
Variable Format: character Notes: UNF:6:6kz/VSZL29bbDxD7PWZf6Q== |
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f858 Location: |
Summary Statistics: Valid 13.0; Mean 0.85; Max. 1.67; Min. 0.24; StDev 0.442700048942095; Variable Format: numeric Notes: UNF:6:0UgPVTUBEmAMbNW99276fA== |
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f858 Location: |
Summary Statistics: Max. 0.49; StDev 0.149164338901763; Min. 0.03; Mean 0.18; Valid 13.0; Variable Format: numeric Notes: UNF:6:3iX34lnL/YxWhzA1QI8deg== |